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Please use this identifier to cite or link to this item: http://dspace.bsu.edu.ru/handle/123456789/28227
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dc.contributor.authorNguyen Hong-
dc.contributor.authorZakhvalinskii, V. S.-
dc.contributor.authorPham, T. T.-
dc.contributor.authorDang, N. T.-
dc.contributor.authorPilyuk, E. A.-
dc.contributor.authorRodriguez, G. V.-
dc.date.accessioned2020-01-29T11:22:07Z-
dc.date.available2020-01-29T11:22:07Z-
dc.date.issued2019-
dc.identifier.citationStructural properties and variable-range hopping conductivity of Cu₂SnS₃ / Nguyen Hong [и др.] // Materials Research Express. - 2019. - Vol.6, №5.-Art. 055915.ru
dc.identifier.urihttp://dspace.bsu.edu.ru/handle/123456789/28227-
dc.description.abstractIn the present work, we investigated the elemental composition, structural and electrical properties of Cu₂SnS₃ (CTS) ternary semiconductor synthesized by the pyrolytic decomposition of the precursors in vacuumru
dc.language.isoenru
dc.subjectphysicsru
dc.subjectsolid state physicsru
dc.subjectphysics of semiconductorsru
dc.subjectchalcogenidesru
dc.subjectphotovoltaic cellsru
dc.subjecthopping conductionru
dc.subjectelectronic propertiesru
dc.subjectsemiconductorsru
dc.subjectstructural propertiesru
dc.titleStructural properties and variable-range hopping conductivity of Cu₂SnS₃ru
dc.typeArticleru
Appears in Collections:Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)

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