| Поле DC | Значение | Язык |
|---|
| dc.contributor.author | Blazhevich, S. V. | - |
| dc.contributor.author | Bochek, G. L. | - |
| dc.contributor.author | Kulibaba, V. L. | - |
| dc.contributor.author | Maslov, N. I. | - |
| dc.contributor.author | Shramenko, B. I. | - |
| dc.date.accessioned | 2013-03-29T13:23:00Z | - |
| dc.date.available | 2013-03-29T13:23:00Z | - |
| dc.date.issued | 2001 | - |
| dc.identifier.citation | Orientation effects in ultrarelativistic electron transmission through a single crystal / S.V. Blazhevich, G.L. Bochek, V.I. Kulibaba // Problems of atomic science and technology. - 2001. - №6.-P. 144-146. | ru |
| dc.identifier.uri | http://dspace.bsu.edu.ru/handle/123456789/4233 | - |
| dc.description.abstract | The results of experimental investigations of the 1.2 GeV electron transmission dynamics in a thin single crystal of Si are discussed. The interpretation of the electron scattering orientation dependencies measured under different scattering angles is carried out | ru |
| dc.language.iso | en | ru |
| dc.subject | science | ru |
| dc.subject | physics | ru |
| dc.subject | electrons | ru |
| dc.subject | scattering | ru |
| dc.subject | single crystal | ru |
| dc.subject | ultrarelativistic electrons | ru |
| dc.subject | crystallographic plane | ru |
| dc.title | Orientation effects in ultrarelativistic electron transmission through a single crystal | ru |
| dc.type | Article | ru |
| dc.identifier.citationpublication | Problems of atomic science and technology | ru |
| dc.identifier.citationnumber | 6 | ru |
| dc.identifier.citationfirstpage | 144 | ru |
| dc.identifier.citationendpage | 146 | ru |
| dc.description.refereed | yes | ru |
| dc.description.institution | Belgorod State University | ru |
| Располагается в коллекциях: | Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)
|
