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Please use this identifier to cite or link to this item: http://dspace.bsu.edu.ru/handle/123456789/44288
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dc.contributor.authorZakhvalinskiy, V. S.-
dc.contributor.authorNikulicheva, T. B.-
dc.contributor.authorPilyuk, E. A.-
dc.contributor.authorLähderanta, E.-
dc.contributor.authorShakhov, M. A.-
dc.date.accessioned2021-11-22T14:26:41Z-
dc.date.available2021-11-22T14:26:41Z-
dc.date.issued2020-
dc.identifier.citationTransport evidence of mass-less Dirac fermions in (Cd₁-x-yZnxMny)₃As₂ (x+y=0.4) / V.S. Zakhvalinskiy [et al.] // Materials Research Express. - 2020. - Vol.7, №1.-Art. 015918. - Doi: 10.1088/2053-1591/ab688b.ru
dc.identifier.urihttp://dspace.bsu.edu.ru/handle/123456789/44288-
dc.description.abstractCharge carriers parameters on a 2D-layer surface for (Cd₁-x-yZnxMny)₃As₂ (y=0.08) (the concentration n₂D=1.9×10¹² cm-², the effective value of the 2D-layer d₂D = n₂D n₃D=14.5 nm, the wave vector kF=0.1nm-1, the charge carriers relaxation time due to dispersion tD =1.8×10-¹³ s, the velocity of charge carriers on Fermi surface vF = kF mc=2.65×105ms-¹, themean free path t = l v F τ D =47.7nm) were determinedru
dc.language.isoenru
dc.subjectphysicsru
dc.subjectsolid state physicsru
dc.subjectShubnikov-de Haas effectru
dc.subjectmass-less Dirac fermionsru
dc.subject3D topological Dirac semimetalsru
dc.subjectmagnetic semiconductorru
dc.subjecttopological propertiesru
dc.titleTransport evidence of mass-less Dirac fermions in (Cd₁-x-yZnxMny)₃As₂ (x+y=0.4)ru
dc.typeArticleru
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