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Please use this identifier to cite or link to this item: http://dspace.bsu.edu.ru/handle/123456789/48146
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dc.contributor.authorYaprintsev, M.-
dc.contributor.authorIvanov, O.-
dc.contributor.authorVasilev, A.-
dc.date.accessioned2022-10-20T06:39:00Z-
dc.date.available2022-10-20T06:39:00Z-
dc.date.issued2022-
dc.identifier.citationYaprintsev, M. Interconnected effects of direct Gd doping and accompanying indirect Te-stoichiometry destroying on the thermoelectric properties of Te-rich Bi₂₋ₓGdₓTe₃₊y compounds / M. Yaprintsev, O. Ivanov, A. Vasilev // Journal of Solid State Chemistry. - 2022. - Vol.308.-Art. 122945. - Doi: 10.1016/j.jssc.2022.122945. - URL:https://www.sciencedirect.com/science/article/pii/S002245962200069Xru
dc.identifier.urihttp://dspace.bsu.edu.ru/handle/123456789/48146-
dc.description.abstractSolvothermal synthesis and spark plasma sintering were applied to prepare Te-rich Bi₂₋ₓGdₓTe₃₊y compounds with 1; 2; 3 and 4 at. % Gd. To synthesize the Te-rich compositions, 3 at. % Te excess was introduced into all the starting powders with different x. Under sintering, high-temperature Te evaporation occurred. Owing to difference in electronegativity of Bi and Gd, resulting in increasing of ionicity degree and relevant strengthen of polar covalent Bi(Gd)-Te bond, a rate of the Te evaporation is remarkably decreasing with increasing xru
dc.language.isoenru
dc.subjectphysicsru
dc.subjectelectricityru
dc.subjectbismuth tellurideru
dc.subjectnonstoichiometric compoundsru
dc.subjectelectronegativityru
dc.subjectpoint defectsru
dc.subjectenergy gapru
dc.subjectthermoelectric propertiesru
dc.titleInterconnected effects of direct Gd doping and accompanying indirect Te-stoichiometry destroying on the thermoelectric properties of Te-rich Bi₂₋ₓGdₓTe₃₊y compoundsru
dc.typeArticleru
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