| Поле DC | Значение | Язык |
|---|
| dc.contributor.author | Syshchenko, V.V. | - |
| dc.contributor.author | Tarnovsky, A.I. | - |
| dc.contributor.author | Dronik, V.I. | - |
| dc.date.accessioned | 2025-08-28T12:44:11Z | - |
| dc.date.available | 2025-08-28T12:44:11Z | - |
| dc.date.issued | 2024 | - |
| dc.identifier.citation | Syshchenko V.V. On anomalous diffusion of fast electrons through the silicon crystal / V.V. Syshchenko, A.I. Tarnovsky, V.I. Dronik // Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. - 2024. - Vol.18, №5.-P. 1094-1099. - Doi: 10.1134/S1027451024700873. - Refer.: p. 1098-1099. | ru |
| dc.identifier.uri | http://dspace.bsuedu.ru/handle/123456789/65383 | - |
| dc.description.abstract | In this work, the anomalous diffusion exponent has been found by numerical simulation for different values of the energy of electron transverse motion in the (100) plane of a silicon crystal | ru |
| dc.language.iso | en | ru |
| dc.subject | physics | ru |
| dc.subject | solid state physics | ru |
| dc.subject | channeling | ru |
| dc.subject | silicon | ru |
| dc.subject | numerical simulation | ru |
| dc.subject | anomalous diffusion | ru |
| dc.subject | fast electrons | ru |
| dc.title | On anomalous diffusion of fast electrons through the silicon crystal | ru |
| dc.type | Article | ru |
| Располагается в коллекциях: | Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)
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