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Please use this identifier to cite or link to this item: http://dspace.bsu.edu.ru/handle/123456789/41611
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dc.contributor.authorZakhvalinskii, V. S.-
dc.contributor.authorPilyuk, E. A.-
dc.contributor.authorNikulicheva, T. B.-
dc.contributor.authorIvanchikhin, S. V.-
dc.contributor.authorYaprintsev, M. N.-
dc.contributor.authorGoncharov, I. Yu.-
dc.contributor.authorKolesnikov, D. A.-
dc.contributor.authorMorocho, A. A.-
dc.date.accessioned2021-06-09T08:06:44Z-
dc.date.available2021-06-09T08:06:44Z-
dc.date.issued2020-
dc.identifier.citationHopping Conductivity Mechanism in Cd₃As₂ Films Prepared by Magnetron Sputtering / V.S. Zakhvalinskii [et al.] // Journal of Nano- and Electronic Physics. - 2020. - Vol.12, №3.-Art. 03029. - Doi: 10.21272/jnep.12(3).03029. - URL: https://jnep.sumdu.edu.ua/download/numbers/2020/3/articles/jnep_12_3_03029.pdfru
dc.identifier.otherDoi: 10.21272/jnep.12(3).03029-
dc.identifier.urihttp://dspace.bsu.edu.ru/handle/123456789/41611-
dc.description.abstractCadmium arsenide films on oxidized silicon substrates were obtained by RF magnetron sputtering. The structure and morphology of the surface were studied by atomic force microscopy (AFM) and Raman spectroscopyru
dc.language.isoenru
dc.subjectphysicsru
dc.subjectsolid state physicsru
dc.subjectcadmium arsenideru
dc.subjectDirac semimetalsru
dc.subjectthin filmsru
dc.subjecthopping conductivityru
dc.titleHopping Conductivity Mechanism in Cd₃As₂ Films Prepared by Magnetron Sputteringru
dc.typeArticleru
Appears in Collections:Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)

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