| Views | |
|---|---|
| Statistical properties of the transverse-motion energy levels for channeling electrons in a silicon crystal under dynamical chaos conditions | 58 |
| May 2025 | June 2025 | July 2025 | August 2025 | September 2025 | October 2025 | November 2025 | |
|---|---|---|---|---|---|---|---|
| Statistical properties of the transverse-motion energy levels for channeling electrons in a silicon crystal under dynamical chaos conditions | 3 | 0 | 4 | 1 | 1 | 7 | 0 |
| Views | |
|---|---|
| Tarnovsky_Statistical.pdf | 84 |
| Views | |
|---|---|
| United States | 19 |
| Vietnam | 5 |
| China | 1 |
| Germany | 1 |
| India | 1 |
| Japan | 1 |
| South Korea | 1 |
| Russia | 1 |
| Tunisia | 1 |
| Views | |
|---|---|
| Fairfield | 6 |
| Mountain View | 5 |
| Hanoi | 3 |
| Sacramento | 2 |
| Coburg | 1 |
| Durham | 1 |
| Kanda | 1 |
| Moscow | 1 |
| Mumbai | 1 |
| Palo Alto | 1 |