| Поле DC | Значение | Язык |
|---|
| dc.contributor.author | Syshchenko, V. V. | - |
| dc.contributor.author | Tarnovsky, A. I. | - |
| dc.date.accessioned | 2022-02-04T12:37:51Z | - |
| dc.date.available | 2022-02-04T12:37:51Z | - |
| dc.date.issued | 2021 | - |
| dc.identifier.citation | Syshchenko, V.V. Statistical properties of the transverse-motion energy levels for channeling electrons in a silicon crystal under dynamical chaos conditions / V.V. Syshchenko, A.I. Tarnovsky // Journal of surface investigation: X-ray, synchrotron and neutron techniques. - 2021. - Vol.15, №4.- P. 728-731. | ru |
| dc.identifier.uri | http://dspace.bsu.edu.ru/handle/123456789/45293 | - |
| dc.description.abstract | This paper studies the calculated energy levels of the transverse motion of relativistic electrons in the axial-channeling regime along the [100] direction of the silicon crystal which is described as motion in the smooth potential well. The nearest-level spacing distributions as well as the spectral rigidity are studied for the range of parameters where electron motion is chaotic within the classical limit. Both these characteristics demonstrate agreement with quantum-chaos-theory predictions | ru |
| dc.language.iso | en | ru |
| dc.subject | mechanics | ru |
| dc.subject | dynamics | ru |
| dc.subject | chaotic dynamics | ru |
| dc.subject | quantum chaos | ru |
| dc.subject | channeling | ru |
| dc.subject | energy levels | ru |
| dc.subject | nearest-neighbor spacing distribution | ru |
| dc.subject | Wigner distribution | ru |
| dc.subject | spectral rigidity | ru |
| dc.title | Statistical properties of the transverse-motion energy levels for channeling electrons in a silicon crystal under dynamical chaos conditions | ru |
| dc.type | Article | ru |
| Располагается в коллекциях: | Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)
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