Preparation and characterization of nonstoichiometric Te-deficient and Te-rich thermoelectric Bi₂₋ₓGdₓTe₃± y compounds

Abstract

The Gd-doped Bi₂Te₃ compounds were prepared by solvothermal synthesis and spark plasma sintering. It was found that for the Bi₂₋ₓGdₓTe₃± y compounds with x = 0.01; 0.05; 0.1; 0.15 and 0.2, the Gd doping results in relevant changing the Te content, y, i.e. x and y are inter-dependent