| DC Field | Value | Language |
|---|
| dc.contributor.author | Piluyk, E. A. | - |
| dc.contributor.author | Ivanov, O. N. | - |
| dc.contributor.author | Zakhvalinskii, V. S. | - |
| dc.contributor.author | Nikulicheva, T. B. | - |
| dc.date.accessioned | 2022-10-20T08:37:01Z | - |
| dc.date.available | 2022-10-20T08:37:01Z | - |
| dc.date.issued | 2021 | - |
| dc.identifier.citation | Features in low-temperature electrical resistivity of amorphous Cd₃As₂ films due to hopping conductivity with changing activation energy / E.A. Piluyk [et al.] // 2021. - Vol.573.-Art. 121134. - Doi: org/10.1016/j.jnoncrysol.2021.121134. - URL: https://www.sciencedirect.com/science/article/pii/S002230932100497X | ru |
| dc.identifier.uri | http://dspace.bsu.edu.ru/handle/123456789/48171 | - |
| dc.description.abstract | Amorphous Cd₃As₂ films were deposited on single-crystalline SrTiO3 substrate by high-frequency non-reactive magnetron sputtering. Electrical resistivity of the film, measured within 3-75 K range, increases at cooling. Below ~70 K, negative transverse magnetoresistance observed. Features in electrical resistivity and magnertoresistance can be attributed to variable-range hopping conductivity of the Mott type with local activation energy, which is temperature-dependent. Two temperature ranges in the hopping conductivity observed | ru |
| dc.language.iso | en | ru |
| dc.subject | physics | ru |
| dc.subject | electricity | ru |
| dc.subject | Cd₃As₂ | ru |
| dc.subject | amorphous films | ru |
| dc.subject | negative magnetoresistance | ru |
| dc.subject | activation energy | ru |
| dc.subject | variable-range hopping conductivity | ru |
| dc.title | Features in low-temperature electrical resistivity of amorphous Cd₃As₂ films due to hopping conductivity with changing activation energy | ru |
| dc.type | Article | ru |
| Appears in Collections: | Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)
|
